Seminar Talk
Abstract
This talk will discuss RF/Microwave Gallium Nitride (GaN) and Gallium Arsenide (GaAs) devices and circuits for emerging applications. It will cover how physics, experiments and mathematics need to come together to enable advanced designs in these technologies. The RF/Microwave circuits such as power amplifiers, limiters, switches etc enabled by advanced physics-based models will be discussed. Emerging challenges and opportunities will be highlighted. For full product ESD protection is also crucial, and this talk will cover research in Electro-static discharge (ESD) behaviors in these technologies. Lastly, talk will touch upon the application of AI in solving some of these challenges for advancing design and modeling.