Course Details
Contents
Environment for VLSI Technology : Clean room and safety requirements, Single crystal growth (Technique), Crystal defects, Wafer cleaning processes and wet chemical etching techniques; Impurity incorporation : Solid State diffusion modelling and technology; Ion Implantation modelling, technology and damage annealing; characterisation of Impurity profiles; Oxidation : Kinetics of Silicon dioxide growth both for thick, thin and ultrathin films; Oxidation technologies in VLSI and ULSI; Characterisation of oxide films; High k and low k dielectrics for ULSI; Lithography :Photolithography, E-beam lithography and newer lithography techniques for VLSI/ULSI; Mask generation; Chemical Vapor Deposition techniques : CVD techniques for deposition of polysilicon, silicon dioxide, silicon nitride and metal films; Epitaxial growth of silicon; modelling and technology; Metal film deposition : Evaporation and sputtering techniques. Failure mechanisms in metal interconnects; Multi-level metallisation schemes; Plasma and Rapid Thermal Processing: PECVD, Plasma etching and RIE techniques; RTP techniques for annealing, growth and deposition of various films for use in ULSI; Process integration for NMOS, CMOS and Bipolar circuits; Advanced MOS technologies.
References
1.Silicon VLSI Technology: Fundamentals, Practice, and Modeling,” James D. Plummer, Michael D C.Y. Chang and S.M.Sze (Ed), ULSI Technology, McGraw Hill Companies Inc, 1996.
2.S.K. Ghandhi, VLSI Fabrication Principles, John Wiley Inc., New York, 1983. S.M. Sze (Ed), VLSI Technology, 2nd Edition, McGraw Hill, 1988.
Other References: Semiconductor Materials and Device Characterization, Dieter K.Schroder, Wiley Interscience, The science and engineering of microelectronic fabrication, Stephen A. Campbell, Oxford, 2001, Semiconductor Lithography Principles, practice and materials, Wayne M. Moreau, Plenum Press