Semiconductor Device Fundamentals

Contents

Part 1: Semiconductor Physics Fundamentals (20–22 hrs)
Introduction & Motivation
Essentials of Quantum Mechanics: Wavefunction, Schrödinger's equation, particle in a potential well, tunneling (reviewing high school/Modern Physics concepts from a new perspective)
Band Theory of Solids: Qualitative formation of bands, Kronig-Penney model, band gap, effective mass
Equilibrium Carrier Statistics: Density of States (DOS), Fermi-Dirac statistics
Non-Equilibrium Transport: Quasi-Fermi level, transport mechanisms (drift/diffusion), carrier continuity
Part 2: Junctions and Devices (20–22 hrs)
Semiconductor–Semiconductor Junctions:
p-n Junctions: Band diagrams, ideal and non-ideal I"-" V characteristics
Heterojunctions: Basic principles
Metal–Semiconductor Junctions: Basic band diagrams, ideal Schottky-Mott theory, and Schottky junctions
MOS Capacitors (MOSCAPs): Modes of operation, ideal and non-ideal C-V characteristics
MOSFETs: Long-channel characteristics, short-channel effects (SCE), and device engineering to mitigate SCE

References

1. Donald Neamen, Semiconductor Physics and Devices (2012)
2. Robert F. Pierret, Semiconductor Device Fundamentals (1996)
3. Streetman and Banerjee, Solid State Electronic Devices (2014)